Abstract: Registration error is one of the significant parameters of MEMS surface process.Its measurement and control is very important.At present,most measurements are through optomechanical methods,but these methods are too complex and need too much measuring time.An electronical test structure is developed to measure registration error between a conductive layer and an insulating layer,which can be used to measure registration error between sacrificial layer and polysilicon layer of MEMS surface process.By making an improvement on the tapered comb vernier structure in integrated circuit,we can convert the measurement of registration error into the measurement of resistance,realizing the electrical measurement of registration error rapidly.The theoretical resolution is 0.1μm.This method is simple and rapid,and can be used easily as a part of MEMS measurement system.