基于Sn/Bi合金的低温气密性封装工艺研究

Low temperature hermetic bonding process based on electrodeposited Sn/Bi alloy

  • 摘要: 研究了采用Sn/B i合金作为中间层的键合封装技术。通过电镀的方法在基片上形成Cr/N i/Cu/Sn、芯片上形成Cr/N i/Cu/B i多金属层,在513K、150Pa的真空环境中进行共晶键合,键合过程不需使用助焊剂,避免了助焊剂对微器件的污染。实验表明:这种键合工艺具有较好的气密性,键合区合金层分布均匀,无缝隙、气泡等缺陷,键合强度较高,能够满足电子元器件和微机电系统(MEMS)可动部件低温气密性封装的要求。

     

    Abstract: A lead-free bonding technique using Sn/Bi alloy as joint was studied.Cr/Ni/Cu/Sn multilayer was electroplated on substrate and Cr/Ni/Cu/Bi was electroplated on chip,then these two were bonded at 240℃in vacuum.This fluxless bonding process can prevent micro device being polluted.The thickness of the joint is uniform along the entire cross section.The strength of the joint is high.This process can make a very hermetic bonding,so it is suitable for hermetic packaging of electronic device and MEMS movable parts at low temperature.

     

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