Abstract: Electrical and thermal properties of Ta-N/Cu film on the Si substrate were investigated.Results show that Ta-N resistance almost does not change when annealing temperature is lower than 500℃.The decrease of resistance for Ta-N/Cu film annealed from 600℃ to 690℃ is induced by oxidation of Ta-N and diffusion,while the increase of resistance for Ta-N/Cu film annealed at temperature higher than 690℃ is attributed to the lost of the transportation ability of Cu line.The study will benefit the fabrication of Cu line and resistor film in very large scale integrating circuit（VLSI）.