三元GaxIn1-xP和四元(AlxGa1-x)0.51In0.49P合金拉曼光谱研究

Raman scattering in GaxIn1-xP and (AlxGa1-x)0.51 In0.49 P alloys

  • 摘要: 测量了室温下三元GaxIn1-xP(x=0.48)和四元(AlxGa1-x)0.51In0.49P(x=0.29)合金背散射配置下的喇曼光谱。三元GaxIn1-xP的喇曼谱表现为双模形式, 在DALA带上叠加了FLA模, 在有序样品中观察到了类GaP的TO1模和类InP的TO2模, 类GaP的LO1模和类InP的LO2模的分裂, 表示有序度的b/a比从无序样品的0.40变化到有序样品的0.10, 有序样品b/a比的降低是由于TO1模和LO1模分裂的影响所造成的。四元(AlxGa1-x)0.51In0.49P为三模形式, 观察到了双峰结构的FLA模, 由于Al组分的影响, 类GaP的LO模成了类InP的LO模的肩峰。所有模式与经验公式吻合得很好。

     

    Abstract: Raman scattering spectroscopy is applied to investigate the phonon modes in GaxIn1-xP (x=0.48) and (AlxGa1-x0.51In0.49P (x=0.29) alloys in back-scattering geometry. Two-mode behavior in GaxIn1-xP is found. In GaxIn1-xP, the FLA is superimposed on the DALA band. In ordered samples, the GaP-like TO1 and the InP-like TO2 are observed.The splitting of LO1(GaP like) and LO2(InP like) are believed to be the superlattice effect of ordering. the b/a ratio ranges from 0.40(nominally disordered) to 0.10(ordered). The small b/a of ordered GaxIn1-xP is affected by the TO1 mode and LO2′ splitting of LO1 mode. (AlxGa1-x0.51In0.49P is characterized by its three-mode behavior. the doubling of FLA is found. Due to the influence of Al composition, the GaP-like LO mode becomes a shoulder of the InP-like LO mode. All the phonon modes are consistent with the results of empirical expressions.

     

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