Abstract: Dual-blue wavelength light-emitting diode（LED） based on mixed InGaN/GaN quantum wells was grown sequentially on the（0001） sapphire substrate by metal-organic chemical vapor deposition（MOCVD） with p-AlGaN and asymmetry n-AlGaN,respectively.It was found that the asymmetry n-AlGaN layer can improve the distribution uniform of electrons and holes and deduce electron overflow relative to the conventional p-AlGaN,and further reduce the dependence of dual-blue wavelength emission spectrum on driving current.In addition,highly color rendering white light emission has been realized from YAG:Ce phosphor-converted white LED based on dual-blue wavelength chip,the color rendering index（CRI） of the corresponding white LED reached 91 at a forward current of 20 mA while that of white LED based on single-blue wavelength chip was only 75.