Abstract: Manganese-doped lead zirconate titanate Pb（Zr_0.5Ti_0.5）1-xMnxO₃（PMZT） with x=0, 0.01, 0.02, 0.03 film were prepared by using sol-gel processing techniques on LaNiO₃/Si（100） substrates. Pt/ Pb（Zr_0.5Ti_0.5）1-xMnxO₃（PMZT）/LaNiO₃ capacitor were fabricated. It shows excellent ferroelectricity. Asymmetric switching behavior of the polarization was observed under the external applied electric field. The asymmetric switching behavior of the polarization becomes larger with the increasing of Mn dopant concentration. The remnant polarization and coercive field decrease with the Mn content increasing. The dielectric constant of PMZT films decreases with the doping Mn decrease at low frequency. The leakage current density increases approximately linearly with voltage. The samples display nearly ohmic behavior. The leakage current increases with the increasing of Mn dopant under the same stress voltage.