SrMnO3阻挡层对La0.8Sr0.2MnO3/Si异质结整流特性的改善

Improvement of rectifying properties of LSMO/Si heterojunction by SrMnO3 barrier layer

  • 摘要: 对用磁控溅射方法在硅基上直接沉积La0.8Sr0.2MnO3和引入SrMnO3(SMO)阻挡层后沉积La0.8Sr0.2MnO3进行了比较。对薄膜结构用X射线衍射试验表征,并分析了薄膜取向生长的原因。卢瑟福背散射实验结果表明,SMO阻挡层的引入显著地削弱了LSMO和Si界面层处的元素互扩散。电学测试表明LSMO/SMO/Si结构比LSMO/Si结构具有更好的p-n结整流特性,而且随SMO缓冲层的增厚,整流特性反而削弱。

     

    Abstract: The rectifying properties of La0.8Sr0.2MnO3(LSMO)/Si with SrMnO3(SMO) as barrier layer were compared with the one without SMO,prepared by using RF magnetron sputtering on Silicon substrate.The X-ray diffraction was used to study the structures of the films and the reason of preferential orientation of the films was investigated subsequently.RBS measurement shows the interdiffusion between LSMO and Si is dramatically impaired through introducing SMO barrier layer.Consequently,the rectifying properties of LSMO/SMO/Si is improved compared with LSMO/Si obviously.But thicker intermediate layer results in the weakening of rectifying properties.

     

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