化学沉积参数对CdS薄膜前驱物利用率的影响

Influence of the chemical bath deposition parameters on the utilization of precursors of CdS thin films

  • 摘要: 采用化学水浴法,在醋酸镉、硫脲、氨水、醋酸铵的体系中制备CdS薄膜,设计L2556正交实验,研究了各沉积参数对前驱物利用率的影响。结果表明,随前驱物醋酸镉、硫脲各自浓度的增加,其自身的利用率下降,但另一方的利用率上升。前驱物的利用率随络合剂醋酸铵浓度的增加先增大后减小,随氨水浓度的增加先减小后增大;其利用率随反应条件温度的增大先增大后保持稳定,随转速的加快先保持稳定后降低,最后又小幅度上升。正交实验表明,当醋酸镉、硫脲、醋酸铵、氨水的浓度分别为2、14、30、400mM/L,温度为70℃,转速为200r/min时,前驱物醋酸镉与硫脲的综合利用率最高。

     

    Abstract: CdS thin films were prepared by using chemical bath deposition(CBD) method in aqueous solutions containing cadmium acetate,ammonium acetate,ammonia and thourea.An orthogonal experiment of six factors and five levels was designed to study the influence of the deposition parameters on the utilization of precursors of CdS thin films.The results indicated that the influence of the chemical bath deposition parameters on the utilization of precursors of the CdS films were all different.With increase in Cd(CH3COO)2 and SC(NH22 concentration,the utilization of its own decline,but the utilization of the other increase.The utilization of precursors with the increase of NH3·H2O concentration first decreased and then increased,with the increase of CH3COONH4 concentration first increased then decreased;first increased and then kept stable along with the increase of temperature,first kept stable then decreased and finally increased small along with the increase of stirring speed.The utilization of Cd(CH3COO)2 and SC(NH22 was high when Cd(CH3COO)2,SC(NH22,CH3COONH4 and NH3·H2O concentration was 2,14,30,400mM/L,temperature was 70℃,and stirring speed was 200r/min.

     

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