Abstract: Amorphous ZrO₂ thin films as novel high-K gate dielectrics were deposited at roomtemperature by Ultra-high Vacuum Electron Beam Evaporation XPS spectra show that the binding energies of Zr3d_5/2 and Zr3d_3/2 are 182.1eV and 194.3eV, respectively, Zr is mainly in its Zr⁴⁺ statewhich means that the thin film is mainly composed of ZrO₂, and the distribution of chemical com-ponents across the thin films is uniform. Spreading Resistance Profile reveals the resistivity of the thinfilms is more than 10⁸Ω·cm, and the interface between zirconia thin films and Si substrate is abruptand clear without interfacial reaction products, which is also verified by High Resolution cross sec-tional Transmission Electron Microscopy （HR-XTEM）. X-ray Diffraction and HR-XTEM results show that the 600oC-annealed sample is amorphous. Atomic Force Microscope was used to charac-terize the surface roughness, and all the samples have smooth surfaces, among which the 600oC rapidthermal annealed sample is smooth with RMS roughness 0.480nm.