Au/In合金在陶瓷封装装片中的应用

APPLICATION OF Au/In ISOTHERMAL SOLIDIFICATION TECHNIAQUE IN DIE ATTACHMENT FOR CERAMIC PACKAGES

  • 摘要: 本文用等温凝固技术研究了Au-In合金在陶瓷封装装片中的应用。结果表明,通过一种多层结构设计和机械振动的作用,硅芯片可在250 ℃~300 ℃、2.1 N/mm2的静态加载压力和流量为0.5l /min的氮气环境下焊接到氧化铝衬底上,绝大多数样品的剪切强度符合MILSTD883D美国军方标准,焊层具有良好的可靠性,在-55 ℃~+125 ℃之间1750周热循环试验后,剪切强度仅有微量下降。同时,用金相方法对热循环试验前后的焊层微结构进行了分析。

     

    Abstract: In this paper, the application of gold-indium isothermal solidification technique in die attachment for ceramic packages is investigated. With a simple design of the multilayer system and mechanical vibration, silicon chip can be bonded onto the allumina substrate within 15 seconds between 250 ℃ and 300 ℃ in nitrogen atmosphere. Most of the samples can satisfy the shear strength test specified by MIL STD 883D. The reliability of the bonds is e valuated with thermal cycle test, and 1750 cycles test between -55 ℃ and+125 ℃, only slight degradation in die shear strength after the test is observed. The microstructures of the bonds are characterized with metallographical investigation.

     

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