Abstract: High resolution x-ray diffraction （HRXRD） is used to analyze the structure of InP-based single-layer InGaAs and InAlAs materials and strain-compensated InGaAs/InAlAs superlattice material.The calculated value of the misorientation-angle of single-layer materials according to the reciprocal space mapping is about 10^-3 degree and it can be neglected.Then the composition and bulk mismatch of the single-layer materials are obtained through the rocking curves.The results of the single-layer materials are then used to analyze the superlattice material grown under the same conditions with molecule beam epitaxy （MBE） technology.The average perpendicular mismatch and the thickness of the super lattice are obtained accurately from the reciprocal space mapping.The simulated curve of the superlattice material through the x-ray simulation software matches very well with the measured curve.