化学表面处理对微型化的氮氧化硅驻极体层电荷储存性能的影响

Influence of chemical surface treatment on charge storage stability for miniature Si3N4/SiO2 electret film

  • 摘要: 研究了化学表面处理对微型化的氮氧化硅膜电荷稳定性的影响,考察了表面处理对脱阱面电荷横向扩散的抑止作用。借助对微型化前后的样品在高温和高湿环境中的表面电位衰减测量的对比,研究了不同试剂的表面处理对微型化样品的电荷储存及其动态特性的影响。

     

    Abstract: The influence of chemical surface treatment on charge stability for miniature Si3N4/SiO2 films was discussed,the inhibit effect of the surface treatment to the lateral diffusion of detrapping charge was investigated.For different chemical reagents,the charge stability and their dynamic of miniature samples after the treatment were studied by comparing the results of surface potential decay under high-temperature and high-humidity conditions between the miniature Si3N4/SiO2 electret film and the bulk film based on silicon.

     

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