Abstract: We investigated the effect of C ion implantationinto SiGe layers on the formation of NiSiGe layers. The layer morphology is investigated as a function of the C implantation dose and annealingtemperature. The presence of C atoms retards the Ni germanosilicidation rate and increases the thermal stability of NiSiGe by about 200℃. We demonstrated that the carbonatoms retard the Ni germanosilicidation rate,stabilize the NiSiGe phase. Theseeffects become more pronounced for higher C implantation dose.