Abstract: In this paper pure GaAs and δ-doped GaAs/AlGaAs two dimensional electron gas materials and their electrical properties were studied by GSMBE and Hall measurement. Pure GaAs materials were grown and measured at first. With slightly Si doping, the electron concentration of GaAs was 2 × 10¹⁴cm^-3 with 77K mobility of 84,000cm^-2/V.s. δ-doped GaAs/AlGaAs two dimensional electron gas was then investigated, and high quality materials were obtained with 77K and 6K mobilities of 174,583 cm^-2/V.s and 7.67 × 10^-5cm^-2/V.s, respectively after the optimization of material structure and growth condition.