电极对PZT铁电薄膜的微观结构和电性能的影响

Microstructure and electric properties of PZT thin films prepared on different bottom electrodes

摘要: 采用溶胶-凝胶(sol-gel)工艺分别在Pt/Ti/SiO₂/Si和LNO/Si电极上制备Pb(Zr_0.53Ti_0.47(PZT)铁电薄膜。研究了不同电极材料对PZT铁电薄膜的微结构及电性能的影响。(100)择优取的PZT/LNO薄膜的介电性能和铁电性能较(111)/(100)取向的PZT/Pt薄膜略有下降,但在抗疲劳特性和漏电流特性方面都有了很大提高。PZT/LNO薄膜10¹⁰次极化反转后剩余极化几乎保持未变,直至10¹²次反转后,剩余极化仅下降了17%。

Abstract: Lead Zirconate titanate Pb（Zr_0.53Ti_0.47）O₃ （PZT） thin films were deposited onto LNO/SiO₂/Si and Pt/Ti/SiO₂/Si substrates by sol-gel method. The effects of LNO bottom electrode on microstruc-ture and electrical properties of the PZT thin films were discussed. Highly （100） oriented PZT/LNOfilms have lower dielectric constant and polarization compared to the （111）/（100） oriented PZT/Ptfilms. Additionally, the PZT/LNO films are found to have fatigue and leakage current behaviors im-proved significantly. The normalized polarizations of the PZT/LNO films have no obvious change up to 10¹⁰ switching cycles, decrease only 17%up to 10¹² switching cycles.