Abstract: Ferroelectric Pb(Zr,Ti)O₃ thin films were prepared by pulsed excimer laser deposition on SOI (Si-on-Insulator) and Pt-coated SOI substrates. Rapid thermal annealing was performed to crystallize the thin films. Based on the analysis by X-ray diffraction, Rutherford backscattering spectroscopy and electrical properties measurements, the films were revealed of to be polycrystalline perovskite structure with mainly <100> and <110> orientations, have a high resistivity and dielectric constant. The PZT thin films on Pt/SOI showed a remanent polarization of 15μc/cm² and a coercive field of 50kV/cm.