Abstract: SIMOX-SOI wafers were fabricated at low oxygen implanted dose.The threading dislocation in top silicon and the pinhole density in the buried oxide layer were characterized by Secco and Cu-plating techniques,respectively.The results indicate that the threading dislocation density in the top silicon is lower in low dose SIMOX wafers,compared with standard dose SIMOX wafers.However,the BOX layer is poor with higher pinhole density,which can be improved by optimizing implantation parameters.