Abstract: This paper discussed the process of LPCVD polysilicon and phosphorus doped polysilicon in detail,and analysed the relationship of the film quality and the process parameter.Adjusted the process parameters during the experiments,kept the film quality and consistency meet our requirement to acquire the fastest deposit rate.The thickness of LPCVD polysilicon film has achieved 2μm;and the thickness of LPCVD phosphorus doped polysilicon film has achieved 1000？.