一种超薄硅薄膜的制作方法

Fabrication of thin Si diaphragm

  • 摘要: 超薄、平整的硅应变薄膜对于制作低量程的电容式压力传感器是非常重要的。提出一种简单的超薄薄膜制作方法,利用浓硼扩散、KOH自停止腐蚀和LPCVD等关键技术,得到了厚度4μm左右的平整的Si(P++)/Si3N4复合薄膜。由于内应力引起的挠度在几百纳米数量级,为制作压力传感器奠定了有用的工艺基础。

     

    Abstract: Very thin and flat silicon sensitive diaphragm is a most important part for fabricating micro-machined capacitive differential pressure sensors with low measure range. In this paper, a simple fabrication method of such thin diaphragm was described in details. During the fabrication of such diaphragm, the key technologies of heavy-doped B diffusion, KOH etch-stop and LPCVD were used. Results show the 4μm thickness compound diaphragm made of Si(P++) and Si3N4 is very flat which meets the requirement of the sensor, and its deflection is about several hundreds nanometers.

     

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