Abstract: This experiment is aimed to find out the characteristics of surface blistering of GaAs.Surface blistering of 6×1016/cm² dose hydrogen ion implanted GaAs wafers were investigated as a function of implantation energy,annealing temperature and annealing time.It shows that blistering is easier to be triggered for wafers with lower implantation energy.Blistering does not occur if the energy is larger than a certain value.With the same implantation energy,surface blistering becomes more obviously with increasing the annealing temperature and prolonging the annealing time.After 300℃ annealing,no blistering is found in the surface of wafer,which indicates that critical temperature of blistering is between 300℃ and 400℃.Above results can be used to optimize the Smart-Cut process for fabrication of GaAs/Si multi-layer materials.