GaInAsSb/GaSb红外探测器抗反膜的研究

Aantireflection coating for GaInAsSb/GaSb PIN infrared photodetectors

摘要: 简单介绍了单层抗反膜的增透原理,并以Si片作为基片采用磁控溅射的方法制备了Al₂O₃、SiO₂和ZrO₂三种抗反膜。膜层的反射率测试结果表明:生长ZrO₂膜后表面反射率下降可达30%;同时通过对GaInAsSb/GaSb PIN红外探测器蒸镀抗反膜前后的器件的I-V特性及黑体探测率的测试表明:蒸镀ZrO₂膜后GaInAsSb/GaSb PIN红外探测器的黑体探测率平均提高了60.28%,远大于蒸镀Al₂O₃、SiO₂后的48.91%和40.04%,说明ZrO₂膜是一种较理想的单层抗反膜,使器件性能有所提高。

Abstract: Transparency-increased theory of single antireflection （AR） coating was introduced. The AR film of Al₂O₃、SiO₂ and ZrO₂ were prepared on Si substrate by sputtering technique.The reflectance ratio can be decreased by 30% by ZrO₂ AR coating . The results of I-V and blackbody detectivity test of Ga-InAsSb/GaSb PIN infrared photodetectors show that ZrO₂ film is one kind of ideal AR coating, which can result in a significant increase of blackbody detectivity by 60.28%,much higher than 40.04% of SiO₂ AR coating and 48.91% of Al₂O₃ AR coating.