掺铅CsI晶体中Pb2+聚集体的发光
Luminescence of Pb2+-based aggregates in Pb-doped CsI crystals
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摘要: 退火处理后的CsI:Pb晶体在10~30 K温度范围内观察到两类发光:当激发波长为410 nm,主要发光带在464 nm附近;而当激发波长为360 nm或300 nm,主发射带为422 nm。这两种发光带的相对强度与退火时间的长短密切相关。讨论了CsI:Pb晶体中不同的Pb2+基聚集相的形成机制 和发光机理。Abstract: Two luminescence phases were observed in annealed CsI:Pb crystals at the 10~30 K temperature range, which are dominant emission round 464 nm with the excitation at 410 nm and dominant emission round 422 nm with the excitation about 360 nm and 300 nm, respectively. It was found that their relative intensities depend strongly on the annealing time and the origin of the emission bands and the formation mechanism of different Pb2+-based aggregates is discussed.
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