Abstract: Silicon carbide is an important wide band gap semiconductor for high temperature, high voltage, high power and high frequency devices. Ion implantation is an important aspect for both fundamental research and device applications. In this paper, oxygen ions, 70keV with doses ranging from 5×10¹³ to 5×10¹⁵ cm^-2 , have been implanted into 6H SiC. The atomic displacement has been simulated using TRIM 94. The dielectric function obtained from spectroscopic ellipsometry was quite sensitive to damage of the surface. The extent of the damage behavior was also checked by Rutherford backscattering spectrometry, channeling and atomic force microscopy.