a-Si/a-SiN<sub>x</sub>超晶格材料光学特性

a-Si/a-SiN_x超晶格材料光学特性

摘要: 采用射频磁控反应溅射技术制备不同Si层厚度的a-Si/a-SiNx超晶格材料。利用红外光谱(IR)、能谱(EDS)、X射线衍射谱(XRD)、吸收谱和光致发光(PL)谱对超晶格材料的成分、结构和发光特性进行研究。结果表明,样品的光学吸收边和PL峰随着Si层的厚度的变化而发生明显偏移,观察到了明显的量子限制效应。在氮气保护下以1000℃对样品进行热退火处理,发现Si层厚的样品退火后发光峰相对于退火前发生了蓝移,这归因于样品中nc-Si颗粒的形成。

Abstract: a-Si/a-SiN_x superlattices of different Si layer thickness were fabricated by RF magnetron sputtering technique.IR,EDS,XRD,absorption,photoluminescence（PL） techniques were used to study the composition,structure and the luminescent properties.The results indicated the absorption edge positions and PL peaks shift with different Si layer thickness.The quantum confinement effects（QCE） was obviously observed.After thermal annealing at 1000℃,the PL peak of the thicker sample was found to shift towards shorter wavelength due to the formed nc-Si particles in a-Si layers.