脉冲激光沉积SrBi2Ta2O9铁电薄膜电容特性研究

PULSE EXCIMER LASER DEPOSITION AND CHARACTERIZATION OF SrBi2Ta2O9 FERROELECTRIC CAPACITORS

  • 摘要: 用PLD方法成功地制备了SBT铁电薄膜,并制作成Pt/SBT/Pt薄膜电容器。SBT薄膜的晶面取向以(008)和(115)为主。在5V电压下,极化反转,并且得到较饱和的电滞回线,剩余极化强度和矫顽电场分别为8.4μC/cm2和57kv/cm。I-V特性测试显示两个对称的双稳峰,并得到零电压下,面积为3.14×104μm2,厚度为0.35μm的电容器,电容约为560pF,介电常数约为600。疲劳测试表明Pt/SBT/Pt具有优良的抗疲劳特性。

     

    Abstract: The perovskite-like SrBi2Ta2O9 thin films have been successfully deposited on Pt-coated silicon substrate by pulse excimer laser deposition. The dominant orientation of SBT thin films was (008) and (115). Polarization was reversed under 5V, and well-saturated hysteresis loop was obtained; Pr and Ec were 8.4 μC/cm2 and 57 kV/cm, respectively The I-V curve of Pt/SBT/Pt showed symmetric bistable peak capacitance and dielectric constant at zero applied voltage for a capacitor with area 3.14×104μm2 and thickness 0.35μm were about 560pF and 600, respectively. Fatigue endurance of the Pt/SBT/Pt capacitor was excellent.

     

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