等离子体充电效应在薄氧化硅层产生陷阱密度的确定

Determination of trap density in thin silicon oxide generated by plasma charging

    摘要
  • 摘要: 通过比较经过和未经过等离子暴露的两种薄栅氧化硅层在恒电流条件下击穿时间tbd的差异，计算出在等离子体暴露过程中由充电效应导致的隧穿电流在天线比为2000的MOS电容栅氧化硅层中产生的陷阱密度为2.35×1018 cm-3，表明充电效应导致损伤的出现。

     

    Abstract: The trap density generated by tunneling current during plasma exposure is caculated by comparing the difference of time-to-breakdown (tbd) between no-plasma-exposure gate oxide and plasma-exposure gate oxide. The results show that the trap density generated in silicon oxide by plasma charging is 2.35×1018 cm-3.

     

    • HTML全文
    • 参考文献(0)
    • 相关文章
    • 施引文献
  • 资源附件(0)

/

返回文章
返回