Abstract: The Pb(Zr,Ti)O₃(PZT) thin film was fabricated by sol-gel technique to form Au/PZT/PT/TiO₂/NiTi/Si(100) structure. The surface morphology phase structure evolution, and the element profiles were examined by using AFM, XRD, TEM-EDX and SAD methods. Results of experiments showed that PZT thin film was well connected with NiTi film; the crystallization temperature of the PZT was reduced by introducing PT layer; both PZT and NiTi were well crystallized; the amorphous PZT thin film transited to the perovskite phase after annealing at 550℃ for 30 min, the formation of pyrochlore phase was effectively retarded; the lattice matching was improved by TiO₂ layer; the interdiffusion of mickel in the multilayer was revealed. The measurement results indicated that the PZT thin film in the Au/PZT/PT/TiO₂/NiTi/Si(100) multilayer retained high dielectric constant, low dissipation factor, low leak current density and ferroelectric hystersis loop, showing its compatibility with NiTi film in processing and properties.