Abstract: The SiCp/Al composites with volume fraction 65.13%SiC were fabricated by compression molding,850℃low temperature with multi -step sintering under air atmosphere and Vacuum Pressure Infiltration with W7 and W63 two kinds of SiC powder,6063 Al Alloy and high temperature adhesive combined with low temperature adhesive.The results show that there are no obvious Al₄C₃ interphase and impurity phase like SiO₂ in the XRD pattern of the composites with high relative density and its Thermal Expansion Coefficient is 7.592×10^-6K^-1at 100℃,the Thermal Conductivity is 172.68/W（m·K）^-1 at normal temperature,the maximum bending load of the sample with the size of 4mm×3mm×30mm is 335.5N and the bending displacement is about 0.16mm.The SiCp/Al composites prepared with such excellent overall properties is good electronic packaging Material.