不同能量氮氧共注入形成的多层SOI结构

SOI with stacked buried layers formed by sequential nitrogen and oxygen ion implantation with multiple energy

摘要: 将氮和氧离子在不同能量下依次注入于硅片,并经1200℃,2h高温退火后,形成具有含有中间硅层的夹心埋层SOI结构。对该样品做俄歇电子能谱(AES)、剖面透射电镜(XTEM)、二次离子质谱(SIMS)和击穿场强等测试,表明退火后形成具有Si-N-O、Si和Si₂O夹心埋层的SOI结构。其击穿场强最大为5×10⁶V/cm,与普通剂量SIMOX的相当。测试还发现氮在界面处有明显的富集效应,而且其在前界面的富集行为明显大于其在后界面的。

Abstract: Silicon wafers were implanted by nitrogen and oxygen ion with multiple energy. The samples were then annealed at 1200℃ for 2h. SOI samples were characterized by means of XTEM, SIMS, AES and breakdown measurement. The results show that the buried layers are composed of Si-N-O, Si and Si₂O layers. The maximal breakdown of electric field is 5×10⁶V/cm which is equal to result of normal SIMOX. It is also found that there is a tendence of nitrogen to be trapped at both the upper and lower interfaces, and the tendence for nitrogen to be trapped at the upper interface is more evident.