石墨烯晶畴尺寸的可控生长及其对材料电学性能的影响

The Controllable Grain Size Synthesis of Graphene and its Effects in Electrical Property

  • 摘要: 采用化学气相沉积技术(CVD)在铜箔衬底上实现了石墨烯单晶畴的可控生长,并用两步生长法制备了不同单晶畴尺寸的多晶石墨烯连续膜。利用光学显微镜和拉曼光谱仪对石墨烯的形貌和结构进行了表征。通过对转移到SiO2衬底上石墨烯连续膜的霍尔测试发现,石墨烯晶畴尺寸变化对其连续膜的电学性能影响显著。石墨烯连续膜的晶畴尺寸越大,其方块电阻越小,载流子迁移率越高。

     

    Abstract: Different grain sizes of single-crystal graphene were successfully synthesized on copper foils by chemical vapor deposition(CVD) and their continuous polycrystalline graphene films were also obtained via two-step growth.The morphology and structure of as-synthesized graphene were characterized by optical microscopy and Raman spectroscopy.The Hall effect investigations for the transferred graphene films on SiO2 substrates revealed that the grain size of single-crystal graphene had a great influence on the electrical properties of its continuous films,and it showed that larger grains could offer smaller square resistance and larger carrier mobility.

     

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