硅离子注入引入纳米晶对SIMOX材料进行总剂量辐射加固

Total Dose Radiation Hardening Process for SIMOX material with Si Nanocrystals Formed by Si Ion Implantation

    摘要
  • 摘要: 本研究工作采用硅离子注入和高温退火工艺对SIMOX材料的BOX层进行总剂量辐射加固。辐射实验结果证明了该加固方法的有效性。PL谱和HRTEM图像显示了硅离子注入及退火工艺在材料的BOX层中引入了Si纳米晶,形成电子陷阱能级,有效俘获电子,从而提高了材料BOX层的抗总剂量辐射能力。

     

    Abstract: In this work BOX of SIMOX material is hardened for total dose radiation by Si ion implantation and high temperature annealing.Radiation experiment shows its validity.PL（Photoluminescence）spectra and HRTEM（high resolution transmission electronmicroscopy）images indicate the hardending process introduced Silicon nanocrystals into the BOX layer of SIMOX material,which made BOX more tolerant to total dose radiation.

     

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