Abstract: Si/SiO₂ films have been grown using the RF magnetron sputtering technique. Visible electrolu-minescence (EL) has been observed from Au film/ (Si/SiO₂)/p-Si structures at a forward bias above 5V. Electroluminescence peak located around 660nm for all the structures,and the EL peak positions depend hardly on the thicknesses of Si layers and the increasing of import power. The experimental results indicated that light emission originates mainly from the luminescence centres in the SiO₂ layers.