部分耗尽环栅CMOS/SOI总剂量辐射效应研究
Total dose radiation effect on partially-depleted CMOS/SOI with enclose-gate structure
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摘要: 采用硅离子注入工艺对注氧隔离(SIMOX)材料进行改性,在改性材料和标准SIMOX材料上制作了部分耗尽环型栅CMOS/SOI反相器,并对其进行60Coγ射线总剂量辐照试验。结果表明,受到同样总剂量辐射后,改性材料制作的反相器与标准SIMOX材料制作的反相器相比,转换电压漂移小的多,亚阈漏电也得到明显改善,具有较高的抗总剂量辐射水平。Abstract: Silicon ion implantion was used to improve SIMOX substrate.Partially-depleped CMOS/SOI inverters with enclose-gate structure were fabricated on improved SIMOX substrate and standard SIMOX substrate.The results of 60Co γ-ray test demonstrate that compared to standard CMOS/SOI inverters,the improved CMOS/SOI inverters have less switching voltage shifts and smaller leakage current after the same total dose irradiation,which shows that the improved CMOS/SOI inverters have better radiation hardness.
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