阴阳极间距对碳纳米管薄膜强流脉冲发射的影响

Influence of diode A-K distance on the intense pulsed emission of Carbon Nanotube Film

  • 摘要: 采用酞菁铁高温裂解法在镀有镍金缓冲层的硅基底上生长了碳纳米管薄膜(CNTs),并采用二极结构在单脉冲模式下研究了其强流脉冲发射特性。结果表明:在脉冲电场峰值相同的条件下(12.1V/μm),阴阳极间距越小,冷阴极的发射电流越大,且冷阴极的开启场强越小;当阴阳极间距为14cm时,CNTs薄膜的强流脉冲发射电流峰值为312A(电流密度为15.9A/cm2),对应的开启场强为4.3 V/μm;当阴阳极间距为12.8cm时,CNTs薄膜的强流脉冲发射电流峰值为747.2A(电流密度为38.OA/cm2),对应的开启场强为4.0 V/μm。

     

    Abstract: Carbon nanotube(CNTs) film was directly grown on Ni/Au substrate by pyrolysis of iron Phthalocyanine(FePc). The intense pulsed emission characteristics of such CNTs film were measured in single pulse with a diode structure. It is found that the smaller the A-K(Anode-Kathode) gap is, the emission current of the cold cathode is larger, and the value of turn-on electric field is samller. Under the same pulsed electric field(~12.1 V/μm),the peak current of CNTs film is 312 A(equivalent current density 15.9 A/cm2) and 747.2 A(equivalent current density 38. OA/cm2), corresponding the values of turn-on electric field be 4.3 V/μm and 4.0 V/μm. when the A-K gap distances are 14 cm and 12.8 cm, respectively.

     

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