掺杂Co2O3对ZnTiO3陶瓷介电性能的影响

掺杂Co₂O₃对ZnTiO₃陶瓷介电性能的影响

摘要: 研究了掺杂Co₂O₃对ZnTiO₃陶瓷的微观结构与介电性能的影响。结果表明,掺杂的Co₂O₃在高温下分解生成Co₂⁺进入ZnZnTiO₃晶格形成(CoxZn_1-x)ZnTiO₃固溶体,有效阻止了其分解为立方尖晶石相和金红石相。当Co₂O₃掺杂量为x=0.1,烧结温度1050℃时,陶瓷具有优良的微波介电性能和体积密度:ε=29.8,Q=4660(f=10GHz),τf=-60×10-6/℃,ρ=5.11g/mm³,并形成稳定、完全致密化的介电陶瓷组织结构。

Abstract: Effect of Co₂O₃–doping on microstructure and dielectric properties of ZnTiO₃ were studied.The results show that Co2+ is produced from high temperature decomposing of Co₂O₃.Zn²⁺ is replaced partially by Co²⁺ in ZnTiO₃ to form（CoxZn_1-x）TiO₃ which prevented ZnTiO₃ dissolved into spinel and rutile.When the Co₂O₃ doped amount is 0.1 and sintering temperature is 1050℃,ZnTiO₃ ceramic system shows stable dense structure and excellent microwave dielectric properties and volume density as follows: ε=29.8,Q=4660（f=10GHz）,τf=-60×10-6/℃,ρ=5.11g/mm³.