Abstract: Silicon piezoresistive sensor was applied here to in-situ record the curing stress profile, the distributions of the residual stress and the stress evolution profile during thermal treatment. It is found that when the chip is attached at the center or near one edge of the base board, the residual stress is relatively low; when the chip is attached near a corner of the base board, the residua stress is relatively high. Moreover, during the thermal treatments dramatic shocks and stress peaks are recorded when the chip is attached near the corner of the base board.