AlGaN/GaN HEMT栅槽低损伤刻蚀技术

Optimization on gate-recessed AlGaN/GaN HEMT with low damage etching technique

摘要: 对AlGaN/GaNHEMT栅槽低损伤刻蚀技术进行研究,通过加入小流量的具有钝化缓冲作用的C₂H₄,对Cl₂/Ar/C₂H₄的工艺条件进行了优化,有效地降低了栅槽刻蚀造成的AlGaN表面损伤和器件退化,同时防止反应生成物淀积在栅槽表面,改善了肖特基结特性,提高了栅极调控能力,实现凹栅槽的低损伤刻蚀。

Abstract: A systematic study of low damage etching recessed gate of AlGaN/GaN HEMT is performed adding a little flux of passivating gas C₂H₄ to the Cl₂/Ar inductively coupled plasma,and the Cl₂/Ar/C₂H₄ is optimized.The surface damage and degeneration of AlGaN are avoid and the etching resultant is removed from the surface of the recessed gate.The Schottky characteristics and gate control ability are improved and the low damage etching recessed gate technique is achieved.