Si/Si<sub>1-x</sub>Ge<sub>x</sub> HEMT结构设计的研究

Si/Si_1-xGe_x HEMT结构设计的研究

摘要: 从晶格匹配及能带阶跃角度讨论了n沟Si/Si_1-xGe_x HEMT结构的设计原理及方法，对Ismail器件进行了分析和计算，所得二维电子气(2DEG)的n_s与实验结果基本相符，并利用该设计理论对Ismail器件的异质结结构进行了优化改进，提高了器件2DEG的n_s。

Abstract: The principle and methed of n-Si/Si_1-xGe_x HEMT structure design has been discussed from the lattice match and the energy band discontinuity points. 2DEG density n_s of the HEMT Ismail reported is essentially according with the experiment data. Final the design of the heterojunction of Ismail's HEMT is improved with higher 2DEG density n_s.