Abstract: A new annealing equipment and processing of Cd_1-xZn_xTe wafers for detectors was reported.The CZT wafers enclosed with a Cd-riched CZT powder source was annealed in the equipment at appropriate annealing temperature and time.After annealing,the resistivity of the CZT wafer is increased and the IR transmittance is improved.XRD analysis shows that the Cd precipitate increases,Cd can be diffused in the crystal by this method.The homogeneity of the CZT wafers was improved by annealing.