Abstract: The current accelerated aging experiments have been performed to the work GaN/Al₂O₃ white LEDS after ESD stressed at voltage 1000V.The influence of electrostatic stress on no failure GaN/Al₂O₃ white LEDs and the comparison of characteristic parameters at different driven current aging have also been researched.It is calculated that aging of GaN/ Al₂O₃ white LEDS for raw and carring ESD 1000V are 460h and 446h respectively.The results show that the electrostatics stress has little influence on aging of GaN/Al₂O₃ white LEDs when the ESD voltage is less than 1000V.The fail LEDs will produce leakage current and degradation of light output