Abstract: We prepared Hf O₂ film on p-Si （100） substrate by refelected RF Magnetron Sputtering,wo studied the process of pereparetion of Hf O₂. Wo perepared Hf O₂ film in deferente experimental conditions.We prepared a group of Hf O₂ film in deferente oxygen partial pressure,We prepared a group of Hf O₂ film in deferente sputtering power,We prepared a group of Hf O₂ film in deferente sputtering time,We prepared a group of Hf O₂ film in deferente substrate temperature,Finally,Hf O₂ films prepared under different conditions were annealed at different temperatures. The properties of these samples were tested and characterized,Its performance is analyzed according to the test results,The prepared Hf O₂ films are of high quality.