镍基合金上离子束辅助沉积双轴取向的YSZ膜—YBCO超导膜缓冲层

ION-BEAM-ASSISTED DEPOSITION OF BIAXIALLY TEXTURED YTTRIA-STABILIZED ZIRCONIA BUFFER LAYER ON POLYCRYSTALLINE Ni-Cr ALLOY FOR YBCO THINFILMS

摘要: 用双离子束辅助沉积（Ion Beam Asisted Deposition，IBAD）方法在Ni-Cr合金上合成了具有（00l）择优取向，平面双轴排列的YSZ膜（Y₂O₃-ZrO₂）作为YBCO超导膜缓冲层。辅助轰击离子束方向与衬底法线的夹角540左右时可获得最佳的（00l）择优效果。800 ℃高温退火后其结构有较大的改善。在其上用MOCVD方法生长的YBCO膜的Tc=88K，Jc=1.0×10⁴A/cm²（0T，77K），并且从Φ扫描的结果说明了YSZ缓冲层上YBCO膜的生长机制。

Abstract: （00l）-oriented and in-plane biaxially aligned yttria-stabilized zirconia（YSZ） thin films have been successfully fabricated on polycrystalline Ni-Cr metal alloys using ion beam assisted deposition （IBAD） as thebuffer layers of YBCO superconducting thin films. When the incident angle of bombarding ion beam to the substrate normal is about 54⁰, the optimal （00l）-oriented textured thin films can be obtained. Improved structure can be realized after post-annealing of 800 ℃. YBCO thin films with Tc=88K and Jc=10⁴ A/cm² （0T, 77K） have been synthesized on YSZ buffer layers using MOCVD method at 800 ℃, and we confirm the growth mechanism of YBCO thin films on textured YSZ buffer layers based on the results of Φ-scan.