Abstract: The perovskite La_0.67Sr_0.33MnO₃（LSMO） film is epitaxially grown by a pulsed laser deposition technique on SrTiO₃（001） single crystal substrate.X-ray diffraction（XRD） and atom force microscope（AFM） are used respectively for the characterization of crystallinity and surface morphology of the film.A novel physical effect in Ag-LSMO structure-room temperature electric-pulse-induced reversible resistance change effect is studied systematically.The results suggest that the resistance of the LSMO film could switch between two distinct resistance states with applied symmetric voltage pulses of ±4V/50ns,and the resistance change ratio changes with the pulsed voltage amplitude,pulse width and pulse number.The effect shows good fatigue performance and nonvolatile storage capability,and will open the way to a variety of electronic applications,such as new kinds of nonvolatile random access memories,sensors and variable resistors.