Abstract: High-quality carbon-doped GaAs, Al_0.36Ga_0.64 As and δ-doping GaAs have been grown by solid source molecular beam epitaxy using a resistively heated carbon fiber as carbon source. The GaAs films were doped from 4×10¹⁴ cm^-3 to 2×10¹⁹ cm^-3 while maintaining good surface morphology. The hole mobility were comparable to beryllium doped films in the same system. The samples were characterized by using Hall effect system, electrochemical C-V profiler and double crystal x-ray diffractometer. The growth process was characterized using the Nomarski microscope and atomic force microscope. It is shown that carbon is an excellent p-type dopant of GaAs based Ⅲ-Ⅴ compound semiconductors.