Abstract: In this paper,we report a study of Nickel reacted with high-Sn concentration Ge Sn materials. Nickel stanogermanide（NiGeSn） films were formed at different annealing temperatures. It is shown that the NiGeSn film has a smooth surface when annealed below 300 oC. Compared to Ni germanide films,it is found that NiGeSn films have a higher Rsh at formation temperatures ranging from 400℃ to 600 ℃ due to the agglomeration of NiGeSn grains. Our findings may have some potential applications for the new electronic and optical devices based on the GeSn materials.