V2O5薄膜结构和性能研究

Microstructural features,properties of vanadium pentoxide thin films

  • 摘要: 在常温下,用脉冲磁控溅射方法石英玻璃和硅片上制备了薄膜,经过450℃退火,得到V2O5薄膜。用XRD、XPS和AFM对薄膜微观结构进行了测试,用分光光度计测量从200~2500nm波段V2O5薄膜的透射和反射光谱。结果表明,V2O5薄膜纯度高、相结构单一、结晶度好。室温到320℃范围内电阻变化2个量级,薄膜的光学能隙为2.46eV,与V2O5体材料性能一致。

     

    Abstract: Vanadium pentoxide(V2O5) thin films were deposited on quartz glass and silicon substrates by pulsed magnetron reactive sputtering technique at room termperature. The deposited films were annealed at 450℃.The surface morphology and structural features were studied by XRD, XPS, and AFM to ensure the growth of V2O5 films. Optical transmission and reflection characteristics were measured by spectro-scopy from 200nm to 2500nm wavelength region. The investigations reveal that V2O5 films have high purity, monophase and 2- order resistance change from room temperature to transition temperature. Their optical band gap(Eg) is about 2.46eV,in accordance with that of bulk V2O5 materials.

     

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