Au/In等温凝固芯片焊接工艺研究
STUDY OF DIE BONDING TECHNOLOGY FOR Au/In ISOTHERMAL SOLIDIFICATION
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摘要: 本文研究了Au/In等温凝固芯片焊接工艺。对机械振动、压力、Au,In镀层厚度、衬底的表面平整度等因素对焊层的剪切强度、结构和热疲劳可靠性的影响进行了分析和优化。在250 ℃-300 ℃之间,实现了较大尺寸芯片(3×3 mm2)在较低成本下的快速焊接。焊层在承受-55 ℃-125 ℃3200周冷热循环后无明显退化。Abstract: A new die bonding technique based on Au/In isothermal solidification is studied. The process and material parameters such as mechanical vibration, load, thickness of the Au and In layers, surface roughness are evaluated. Bonding with big die size (3×3 mm2) is achieved in between 250℃-300℃ with high speed and relative low cost. The bonds could withstand 3200 cycles between -55℃ to 125℃ without obvious degradation.
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