Abstract: Photoluminescence（PL） spectra of InGaAsSb multiple quantum-well materials （MQW） grown by molecular beam epitaxy （MBE） were investigated.The results show that the quality of InGaAsSb MQW materials depends on substrate temperature. An appropriate substrate temperature can increase the photoluminescence（ PL） intensity. With the same composition, the PL wavelength increases with the increasment of well thickness to some extent, yut it increases slowly beyond the range of well thickness.