Abstract: A connection between the back contact and the front contact in a solar cell will short-circuit the cell by forming a highly conductive ohmic shunt path.Without the intrinsic zinc oxide（i-ZnO） layer,a scratch or a hole would form a shunt path between the molybdenum back contact and the aluminum doped zinc oxide front contact.Intrinsic ZnO layer can reduce the effect of this kind of shunts and the amount of protection depends on the resistivity and the morphology of the ZnO film.In our work,ZnO film was prepared for CIS solar cell application on CIS layer by inductively coupled plasma（ICP） assisted DC magnetr on sputtering at room temperature.The sputtering was done in an Ar and O₂ gas mixture and a ceramic ZnO target was used.The microstructures of the film were investigated by X-ray diffractometer（XRD） and scanning electron microscope（SEM）.Film with resistivity of 7×10⁸ Ω·cm and transmittance of about 80% in the visible range was prepared under the conditions of 4 mTorr working pressure,300W RF power,30W DC power.