GaxIn1-xAs/GaInAsP应变量子阱结构能带的计算
Calculation of band structure of GaxIn1-xAs/GaInAsP strained quantum wells
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摘要: 对含有Luttinger-Kohn哈密顿量的有效质量方程,利用S.L.Chuang提出的传递矩阵法,计算了量子阱中不同Ga组分的GaxIn1-xAs/GaInAsP应变量子阱结构的能带,该结构可被选作980nm光通信泵浦激光器的有源层。研究还得到了GaxIn1-xAs/GaInAsP双应变量子阱结构中电子和空穴的能级以及能级的色散关系。Abstract: The band structure of GaxIn1-xAs/GaInAsP strained quantum wells is calculated by using Luttinger-Kohn Hamiltonian-based propagation-matrix method presented by S.L.Chuang. This kind band structure can be chosen as an active layer of 980nm pump laser for optical communications. The energy levels of electrons and holes in GaxIn1-xAs/GaInAsP strained quantum wells, as well as their dispersion relations are obtained.
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